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HAT2174H
Silicon N Channel Power MOS FET Power Switching
REJ03G0041-0400 Rev.4.00 Dec 11, 2006
Features
* * * * Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 21 m typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK )
5 D 5 4 4 G 1, 2, 3 Source 4 Gate 5 Drain SSS 123
3 12
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-C Tch Tstg Ratings 100 20 20 80 20 20 40 20 6.25 150 -55 to +150 Unit V V A A A A mJ W
C/W C C
Rev.4.00 Dec 11, 2006 page 1 of 7
HAT2174H
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 20 -- -- 4.0 -- -- 21 -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 21 22 35 2280 285 100 0.5 33.5 12.4 8.4 18 13 31 5.5 0.84 50 Max -- -- 10 1 6.0 27 30 -- -- -- -- -- -- -- -- -- -- -- -- 1.10 -- Unit V V A A V m m S pF pF pF nC nC nC ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, I D = 20mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 8 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V,VGS = 0, f = 1 MHz
VDD = 50 V,VGS = 10 V, ID = 20 A VGS = 10 V, ID = 10 A, VDD 30 V, RL = 3 , Rg = 4.7 IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/ dt = 100 A/ s
Rev.4.00 Dec 11, 2006 page 2 of 7
HAT2174H
Main Characteristics
Power vs. Temperature Derating
40 500 100
DC
Maximum Safe Operation Area
Pch (W)
ID (A)
30
PW
Op
1
10
0
Channel Dissipation
10
=
m
Drain Current
20
er
10
s
s
10
s
at
m
ion
s
10
1 Operation in this area is limited by RDS(on) 0.1 0.01 0.1 0.3 Tc = 25C 1 shot Pulse 1 3 10 30 100 500
0
50
100
150
200
Case Temperature
Tc (C)
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
20 VGS =10 V 8V Pulse Test 5.8 V 20
Typical Transfer Characteristics
ID (A)
12
5.6 V
ID (A)
16
16
VDS = 10 V Pulse Test
12
Drain Current
Drain Current
8 5.4 V 4 5.0 V 5.2 V 0
8 Tc = 75C 4
25C -25C
2
4
6
8
10
0
2
4
6
8
10
Drain to Source Voltage
VDS (V)
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
Drain to Source On State Resistance RDS(on) (m) Drain to Source Voltage VDS(on) (mV)
500 Pulse Test 400
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test 50 VGS = 8 V 20 10 5 10 V
300
200
ID = 10 A
100
5A 2A
2 1 1 2 5 10 20 50 100
0
4
8
12
16
20
Gate to Source Voltage
VGS (V)
Drain Current
ID (A)
Rev.4.00 Dec 11, 2006 page 3 of 7
HAT2174H
Static Drain to Source on State Resistance vs. Temperature
Forward Transfer Admittance |yfs| (S)
100 Pulse Test 80 100 30 10 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 1 3 10 30 100 25C Tc = -25C 75C
Static Drain to Source on State Resistance RDS(on) (m)
Forward Transfer Admittance vs. Drain Current
60 40 VGS = 8 V 20 10 V 0 -25 0 25 50 75
ID = 10 A
5 A, 2 A
2 A, 5 A, 10 A
100 125 150
Case Temperature
Tc
(C)
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
10000 3000 1000 300 Coss 100 30 10 100 0 10 20 30 Crss VGS = 0 f = 1 MHz 40 50 Ciss
Body-Drain Diode Reverse Recovery Time
100
Reverse Recovery Time trr (ns)
50
20 di / dt = 100 A / s VGS = 0, Ta = 25C 0.3 1 3 10 30
10 0.1
Reverse Drain Current
IDR (A)
Capacitance C (pF)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
VDS (V)
ID = 20 A
VDD = 25 V 50 V 100 V VGS 16
Switching Characteristics
VGS (V)
20 1000 300 100 td(off) 30 10 3 td(on) tf tr VGS = 10 V, VDD = 30 V Rg = 4.7 , duty 1 %
250 200
Drain to Source Voltage
150 100 VDD = 100 V
12 8
50
50 V VDS 25 V
4 0 80
0
Gate to Source Voltage
Switching Time t (ns)
16
32
48
64
0.1 0.2 0.5 1
2
5
10 20
50 100
Gate Charge
Qg (nc)
Drain Current
ID (A)
Rev.4.00 Dec 11, 2006 page 4 of 7
HAT2174H
Reverse Drain Current vs. Source to Drain Voltage
20
(mJ)
Maximum Avalanche Energy vs. Channel Temperature Derating
50 IAP= 20 A VDD = 50 V duty < 0.1 % Rg 50
Reverse Drain Current IDR (A)
16 10 V 12 5V VGS = 0
Repetitive Avalanche Energy EAR
40
30
8
20
4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0
10 0 25
50
75
100
125
150
Source to Drain Voltage
VSD (V)
Channel Temperature Tch (C)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance s (t)
3 Tc = 25C 1 D=1 0.5 0.3
0.2
0.1
0.1
ch - c(t) = s (t) * ch - c ch - c = 6.25C/ W, Tc = 25C PDM
t ho pu lse
0.05
0.03
0.02 1 0.0
1s
D= PW T
PW T
0.01 10
100
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
1 2 L * IAP2 * VDSS VDSS - VDD V(BR)DSS IAP VDD VDS
VDS Monitor
L IAP Monitor
EAR =
Rg
D. U. T
ID
Vin 15 V 50 0 VDD
Rev.4.00 Dec 11, 2006 page 5 of 7
HAT2174H
Switching Time Test Circuit
Vin Monitor D.U.T. Rg RL VDS = 30 V 90% td(on) tr 90% td(off) tf Vin Vout Vin 10 V 10% 10% 10% Vout Monitor
Switching Time Waveform
90%
Rev.4.00 Dec 11, 2006 page 6 of 7
HAT2174H
Package Dimensions
Package Name LFPAK JEITA Package Code SC-100 RENESAS Code PTZZ0005DA-A Previous Code LFPAKV MASS[Typ.] 0.080g
Unit: mm
4.9 5.3 Max 4.0 0.2 5
0.25 -0.03
+0.05
3.3
1.0
3.95
1
4
6.1 -0.3
+0.1
0 - 8
1.1 Max +0.03 0.07 -0.04
0.75 Max 1.27 0.10 0.40 0.06
0.25 M
0.6 -0.20 1.3 Max
+0.25
0.20 -0.03
+0.05
(Ni/Pd/Au plating)
Ordering Information
Part No. HAT2174H-EL-E Quantity 2500 pcs Taping Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.4.00 Dec 11, 2006 page 7 of 7
4.2
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0

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